Módulos de potencia de semiconductores
Los módulos de potencia HIITIO están diseñados para una conversión y un control de potencia eficientes, integrando tecnologías IGBT, MOSFET y SiC. Ofrecen alta densidad de potencia y baja pérdida, y se utilizan ampliamente en la industria, la energía renovable, el transporte eléctrico y los electrodomésticos.
Filtros Ordenar resultados
Restablecer Aplica aquí
Imagen | Número de refacción | Tipo | PREMIUM | Diagrama de circuito | Voltaje de bloqueo (V) | Corriente (A) | RDs(activado) (mΩ) | Temperatura máxima (℃) | Especificaciones |
|---|---|---|---|---|---|---|---|---|---|
 | SiC SBD | TO-220-2 | 1200 | 2 | ⋅ | 159 | |||
| SiC SBD | TO-220-2 | 650 | 4 | ⋅ | 153 | |||
 | SiC SBD | DFN8*8 | 650 | 6 | ⋅ | 159 | |||
 | SiC SBD | SOT-227 | 1200 | 120 | ⋅ | 108 | |||
 | SiC SBD | TO-247-3 | 1200 | 16 | ⋅ | 155 | |||
| SiC SBD | TO-247-3 | 1200 | 20 | ⋅ | 152 | |||
 | SiC SBD | TO-247-2 | 1200 | 20 | ⋅ | 150 | |||
| SiC SBD | TO-247-3 | 1200 | 40 | ⋅ | 151 | |||
| SiC SBD | TO-247-2 | 1200 | 40 | ⋅ | 155 | |||
| SiC SBD | TO-247-2 | 1200 | 60 | ⋅ | 144 | |||
 | IGBT | 34 mm | Half Bridge | 1200 | 100 | ⋅ | |||
| IGBT | 34 mm | Half Bridge | 1700 | 100 | ⋅ | |||
 | IGBT | Easy 2B | FL: 3-level | 650 | 100 | ⋅ | 150 | ||
 | IGBT | Econo PIM 3H | PIM | 1200 | 100 | ⋅ | |||
 | IGBT | Econo PIM 2H | FT: Three phase | 1200 | 100 | ⋅ | 150 | ||
| IGBT | Econo PIM 2H | FT: Three phase | 1200 | 100 | ⋅ | 150 | ||
| IGBT | Econo PIM 3H | FF : Full-Bridge | 1700 | 150 | ⋅ | |||
| IGBT | 34 mm | Half Bridge | 1200 | 150 | ⋅ | |||
 | IGBT | 62 mm | Half Bridge | 1200 | 150 | ⋅ | 175 | ||
| IGBT | Easy 2B | FL: 3-level | 650 | 150 | ⋅ | 150 |
